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| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS EATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. KTK5162S N CHANNEL MOS FIELD EFFECT TRANSISTOR L E B L DIM A MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1.5V. 2 3 D B C D E G H J K A G H 1 P P L M N P C N CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS VGSS ID PD Tch Tstg RATING 60 20 100 200 150 -55 150 UNIT V V mA mW 1. SOURCE 2. GATE 3. DRAIN K MAXIMUM RATINGS (Ta=25 ) M SOT-23 EQUIVALENT CIRCUIT D Marking Lot No. G Type Name KF S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time ) TEST CONDITION VGS= 16V, VDS=0V MIN. 60 0.5 85 TYP. 120 22 6.2 1.5 4.4 10 105 MAX. 1 1 1.5 40 pF pF pF nS nS UNIT A V A V mS SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff ID=100 A, VGS=0V VDS=60V, VGS=0V VDS=3V, ID=0.1mA VDS=10V, ID=50mA ID=10mA, VGS=2.5V VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDD=25V, ID=50mA, VGS=0 2.5V 2001. 10. 29 Revision No : 0 J 1/3 KTK5162S I D - V GS I D - V DS 0.10 DRAIN CURRENT I D (A) 0.08 V (LOW VOLTAGE REGION) 0.20 DRAIN CURRENT I D (A) V 3.0 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.06 0.04 0.02 VGS =2.0V 2.5V 0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE V DS (V) 1 2 Ta= -25 Ta= C 25 C Ta= 8.0 3 75 C COMMON SOURCE Ta=25 C 6. 0V V 4.0 10 0.18 COMMON SOURCE VSD =10V V 4 5 DRAIN-SOURCE VOLTAGE VGS (V) Y fs - I D FORWARD TRANSFER ADMITTANCE Yfs (S) 1 0.5 0.3 5C Ta=-2 I F - V SD 0.3 FORWARD CURRENT I F (A) COMMON SOURCE VGS =0 COMMON SOURCE VDS =3V 0.05 0.03 0.1 0.05 0.03 0.01 Ta=2 5C C Ta=75 0.01 0.03 0.05 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 DRAIN CURRENT I D (A) DIODE FORWARD VOTAGE VSD (V) 30 CAPACITANCE C (pF) DRAIN SOURCE ON-STATE RESISTANCE R DS(ON) () C - V DS COMMON SOURCE VGS =0 f=1MHz Ta=25 C C iss Coss R DS(ON) - I D 50 30 COMMON SOURCE VGS =2.5V Ta=25 C 10 5 3 10 1 0.5 0 5 10 15 20 25 30 C rss 5 0.3 0.5 1 3 5 10 30 DRAIN CURRENT I D (mA) 35 40 45 50 DRAIN-SOURCE VOLTAGE V DS (V) 2001. 10. 29 Revision No : 0 75 C Ta= 25 C Ta= -25 C 0.1 Ta= 2/3 KTK5162S t - ID DRAIN POWER DISSIPATION P D (mW) 1K SWITCHING TIME t (ns) 500 300 100 50 30 10 5 0.01 0.03 0.05 0.1 DRAIN CURRENT I D (A) tr t on tf VDD=25V VGS =10V P D - Ta 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 t off AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT VDD=25V I D=500mA R L=500 D PW=10s D.U. < 1% = 10V 0V VIN P.G 50 S KTK5162S VOUT VIN G 2001. 10. 29 Revision No : 0 3/3 |
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